本文通过分析目前显示器用的高均匀宽角度灯珠的光学要求，采用新型非朗伯（non-Lambertian）分布封装Micro-LED芯片，实现了宽光束、高均匀性的微型LED芯片光珠。分析了在不同封装倾角、封装高度、封装材料、封装支架材料、蓝宝石厚度和图案化蓝宝石衬底尺寸下，使用由不同封装材料（铜、钛、铝和银）和材料类型（完全反射和完全吸收）组成的支架模拟固定灯珠的光输出效率和出光角度的变化情况。研究发现通过调整材料、芯片和封装参数，可以得到一个、两个或三个光束，具有贴片灯珠的宽角度、高均匀性的远场光分布特性，满足当前LED和LCD的显示要求。

With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual- or multi-wavelength detectors, while integration of both visible light and ultraviolet (UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing GaN substrate. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was realized. The responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/W. Meanwhile, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication.